A High-Density Metal-Fuse Technology Featuring a 1.6 V Programmable Low-Voltage Bit Cell With Integrated 1 V Charge Pumps in 22 nm Tri-Gate CMOS.
Sarvesh H. KulkarniZhanping ChenBalaji SrinivasanM. Brian PedersenUddalak BhattacharyaKevin ZhangPublished in: IEEE J. Solid State Circuits (2016)
Keyphrases
- cmos technology
- low voltage
- high density
- random access memory
- low power
- field effect transistors
- magnetic tape
- power consumption
- low cost
- low density
- parallel processing
- silicon on insulator
- leakage current
- single chip
- data center
- power line
- nm technology
- close proximity
- chemical vapor deposition
- thin film
- mixed signal
- high speed
- image sensor
- metal oxide semiconductor
- design considerations
- power dissipation
- signal to noise ratio
- digital signal processing
- high temperature
- power management