Circuit Performance Degradation of Switched-Capacitor Circuit with Bootstrapped Technique due to Gate-Oxide Overstress in a 130-nm CMOS Process.
Jung-Sheng ChenMing-Dou KerPublished in: IEICE Trans. Electron. (2008)
Keyphrases
- cmos technology
- short circuit
- metal oxide
- circuit design
- high speed
- field effect transistors
- low power
- nm technology
- analog circuits
- low voltage
- parallel processing
- leakage current
- digital circuits
- logic circuits
- electronic circuits
- power supply
- neural network
- multiple input
- low cost
- delay insensitive
- analog vlsi
- metal oxide semiconductor
- duty cycle
- si sio
- gallium arsenide
- single phase
- fuel cell
- evolvable hardware
- power consumption
- expert systems
- image processing