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Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition.
Y. Lu
Octavian Buiu
Steve Hall
Ivona Z. Mitrovic
W. Davey
R. J. Potter
Paul R. Chalker
Published in:
Microelectron. Reliab. (2007)
Keyphrases
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electrical properties
silicon nitride
gate dielectrics
film thickness
drug discovery
chemical compounds
light emitting diodes
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three dimensional
dynamic programming
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grain size
high temperature
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leakage current