2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without gate-oxide reliability issue.
Ming-Dou KerTzu-Ming WangHung-Tai LiaoPublished in: ISCAS (2008)
Keyphrases
- gate dielectrics
- field effect transistors
- cmos technology
- semiconductor devices
- low voltage
- leakage current
- electrical properties
- si sio
- circuit design
- low power
- high speed
- steady state
- analog vlsi
- nm technology
- delay insensitive
- power consumption
- chip design
- metal oxide semiconductor
- mathematical analysis
- vlsi circuits
- low cost
- power dissipation
- parallel processing
- high density
- mobile devices
- flip flops
- silicon dioxide
- feedback loop
- electronic circuits
- power management
- multiple input
- analog circuits