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Gate leakage current suppression and reliability improvement for ultra-low EOT Ge MOS devices by suitable HfAlO/HfON thickness and sintering temperature.

Wei-Fong ChiKuei-Shu Chang-LiaoShih-Han YiChen-Chien LiYan-Lin Li
Published in: Microelectron. Reliab. (2015)
Keyphrases
  • leakage current
  • electrical properties
  • low voltage
  • film thickness
  • silicon dioxide
  • high speed
  • power line
  • mobile devices
  • edge detection
  • embedded systems
  • multiple input