Encountering gate oxide breakdown with shadow transistors to increase reliability.
Claas CorneliusFrank SillHagen SämrowJakob SalzmannDirk TimmermannDiógenes Cecilio da Silva Jr.Published in: SBCCI (2008)
Keyphrases
- leakage current
- field effect transistors
- low voltage
- cmos technology
- silicon dioxide
- high density
- electrical properties
- gate dielectrics
- steady state
- reliability analysis
- si sio
- fuel cell
- highly reliable
- mathematical analysis
- case study
- power line
- integrated circuit
- low power
- power consumption
- single image
- wireless sensor networks