Double Gate TFET with Germanium Pocket and Metal drain using Dual Oxide.
Anam KhanSajad A. LoanPublished in: ICM (2021)
Keyphrases
- field effect transistors
- steady state
- high density
- silicon dioxide
- mathematical analysis
- high temperature
- silicon nitride
- metal oxide
- leakage current
- early warning
- high impact
- primal dual
- multiscale
- computer vision
- electrical properties
- markov chain
- thin film
- low voltage
- e learning
- artificial intelligence
- neural network