Sign in
Silicon dioxide deposited by ECR-PECVD for low-temperature Si devices processing.
A. Pecora
Luca Maiolo
A. Bonfiglietti
M. Cuscunà
F. Mecarini
Luigi Mariucci
Guglielmo Fortunato
N. D. Young
Published in:
Microelectron. Reliab. (2005)
Keyphrases
</>
leakage current
silicon dioxide
chemical vapor deposition
silicon nitride
low voltage
thin film
real time
processing capabilities
electrical properties
mobile devices
data sets
high temperature
database
high density
mobile applications
mobile phone
space charge
neural network