Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs.
Seonhaeng LeeCheolgyu KimHyeokjin KimGang-Jun KimJi-Hoon SeoDonghee SonBongkoo KangPublished in: Microelectron. Reliab. (2013)
Keyphrases
- field effect transistors
- high temperature
- silicon dioxide
- metal oxide
- low variance
- high levels
- positive and negative
- electric field
- high correlation
- room temperature
- high density
- significantly lower
- high sensitivity
- low memory requirements
- neural network
- high voltage
- small size
- steady state
- power system
- high noise
- wide range