Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices.
Anna Maria SzekeresT. NikolovaS. SimeonovA. GushterovF. HamelmannU. HeinzmannPublished in: Microelectron. J. (2006)
Keyphrases
- chemical vapor deposition
- thin film
- high density
- gate dielectrics
- electrical properties
- silicon dioxide
- leakage current
- field effect transistors
- silicon nitride
- mobile devices
- liquid crystal displays
- semiconductor devices
- embedded systems
- fiber optic
- low density
- nano scale
- mobile applications
- steady state
- neural network