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Etch Rate of Oxide Grown on Silicon Implanted with Different Ion Implantation Conditions prior to Oxidation.
Yang-Hee Joung
Seong-Jun Kang
Published in:
J. Inform. and Commun. Convergence Engineering (2003)
Keyphrases
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transmission electron microscopy
silicon dioxide
si sio
metal oxide
prior knowledge
sufficient conditions
x ray
high speed
electron microscopy
silicon nitride
low cost
markov chain
solid state
electrical properties
high pressure
evolutionary algorithm
leakage current
case study
image processing
neural network