An approach to statistical analysis of gate oxide breakdown mechanisms.
Cher Ming TanNagarajan RaghavanPublished in: Microelectron. Reliab. (2007)
Keyphrases
- statistical analysis
- leakage current
- low voltage
- electrical properties
- silicon dioxide
- power line
- field effect transistors
- statistical methods
- three dimensional
- clinical data
- mechanisms underlying
- multiple input
- fuel cell
- high temperature
- neural network
- electron microscopy
- computational models
- building blocks
- expert systems
- information systems