Engineering buried oxide in dopant-segregated Schottky barrier SOI MOSFET for nanoscale CMOS circuits.
Ganesh C. PatilShafi QureshiPublished in: Microelectron. Reliab. (2013)
Keyphrases
- schottky barrier
- field effect transistors
- chip design
- delay insensitive
- high density
- steady state
- analog vlsi
- gate dielectrics
- circuit design
- silicon on insulator
- mathematical analysis
- high speed
- vlsi circuits
- cmos technology
- power dissipation
- software engineering
- artificial intelligence
- low power
- floating gate
- focal plane
- power consumption
- electron microscopy
- engineering design
- low cost
- si sio
- mixed signal
- asynchronous circuits
- fuel cell
- atomic force microscopy
- state space
- computer science