SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs.
Patrick FiorenzaC. BongiornoA. MessinaMario SaggioFilippo GiannazzoFabrizio RoccafortePublished in: IRPS (2022)
Keyphrases
- low voltage
- electrical properties
- power losses
- metal oxide
- power management
- silicon dioxide
- power system
- duty cycle
- electrical power
- power consumption
- single phase
- energy dissipation
- reactive power
- leakage current
- high voltage
- power quality
- power supply
- design considerations
- electric power systems
- learning algorithm
- operating point
- active power
- power grid
- electric field
- thresholding method
- data center
- x ray