Satyabrata Jit

Publication Activity (10 Years)

Years Active: 2006-2023
Publications (10 Years): 6

Top Topics

Chemical Vapor Deposition

Top Venues

Microelectron. J.

IET Circuits Devices Syst.

Publications

P. S. T. N. Srinivas, Satyabrata Jit, Pramod Kumar Tiwari
As GAA MOSFETs. Microelectron. J. 131 (2023)
Ashish Kumar Singh, Manas Ranjan Tripathy, Kamalaksha Baral, Prince Kumar Singh, Satyabrata Jit
Investigation of DC, RF and linearity performances of a back-gated (BG) heterojunction (HJ) TFET-on-selbox-substrate (STFET): Introduction to a BG-HJ-STEFT based CMOS inverter. Microelectron. J. 102 (2020)
Balraj Singh, Deepti Gola, Satyabrata Jit
Subthreshold Performance Analysis of Double-Fin Multi-channel Junctionless Transistor with Substrate Bias Effects. TENCON (2019)
Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bhola N. Pal, Satyabrata Jit
Electrical and optical characteristics of CdSe Quantum Dot based Schottky diode. ICIIS (2016)
Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bhola N. Pal, Satyabrata Jit
Optical Characteristics of Solution Processed MoO2/ZnO Quantum Dots Based Thin Film Transitor. iNIS (2016)
Yogesh Kumar, Hemant Kumar, Gopal Rawat, Chandan Kumar, Bhola N. Pal, Satyabrata Jit
Electrical and Optical Characteristics of Pd/ZnO Quantum Dots Based Schottky Photodiode on n-Si. iNIS (2016)
Shweta Tripathi, Satyabrata Jit
Analytical modelling of the current (I)-voltage (V) characteristics of sub-micron gate-length ion-implanted GaAs MESFETs under dark and illuminated conditions. IET Circuits Devices Syst. 7 (1) (2013)
Harshit Agnihotri, Abhishek Ranjan, Pramod Kumar Tiwari, Satyabrata Jit
An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs. ISVLSI (2011)
Pramod Kumar Tiwari, Chinmay R. Panda, Anupam Agarwal, Pratik Sharma, Satyabrata Jit
Modelling of doping-dependent subthreshold swing of symmetric double-gate MOSFETs. IET Circuits Devices Syst. 4 (4) (2010)
Satyabrata Jit, Neti V. L. Narasimha Murty
Analytical study of the photo-effects on common-source and common-drain microwave oscillators using high pinch-off n-GaAs MESFETs. Microelectron. J. 37 (5) (2006)