Pramod Kumar Tiwari

Publication Activity (10 Years)

Years Active: 2010-2024
Publications (10 Years): 11

Top Topics

Nonlinear Regression

Semiconductor Devices

Mathematical Analysis

Top Venues

Microelectron. J.

Publications

Sai Shirov Katta, Tripty Kumari, P. S. T. N. Srinivas, Pramod Kumar Tiwari
Logic-in-memory application of silicon nanotube-based FBFET with core-source architecture. Microelectron. J. 146 (2024)
P. S. T. N. Srinivas, Satyabrata Jit, Pramod Kumar Tiwari
As GAA MOSFETs. Microelectron. J. 131 (2023)
Sai Shirov Katta, Tripty Kumari, Subir Das, Pramod Kumar Tiwari
Design and performance assessment of a vertical feedback FET. Microelectron. J. 137 (2023)
Ashraf Maniyar, P. S. T. N. Srinivas, Pramod Kumar Tiwari
Impact of Process-Induced Inclined Sidewalls On Small Signal Parameters of Silicon Nanowire GAA MOSFET. TENCON (2023)
Ajit Kumar, Pramod Kumar Tiwari, J. N. Roy
Subthreshold model of asymmetric GAA junctionless FETs with scaled equivalent oxide thickness. Microelectron. J. 126 (2022)
Sandeep Moparthi, Pramod Kumar Tiwari, Gopi Krishna Saramekala
Genetic algorithm-based threshold voltage prediction of SOI JLT using multi-variable nonlinear regression. ISDCS (2021)
Visweswara Rao Samoju, Gopi Krishna Saramekala, Pramod Kumar Tiwari, Ayas Kanta Swain, Kamalakanta Mahapatra
Modeling of Drain Current and Analog Characteristics of Dual-Metal Quadruple Gate (DMQG) MOSFETs. iSES (2019)
Deepti Gola, Balraj Singh, Pramod Kumar Tiwari
Analytical Modeling of Analog/RF Parameters for Trigate Junctionless Field Effect Transistor Incorporating Substrate Biasing Effects. TENCON (2019)
Arun Kumar, P. S. T. N. Srinivas, Pramod Kumar Tiwari
Analytical Modeling of Subthreshold Current and Subthreshold Swing of Schottky-Barrier Source/Drain Double Gate-All-Around (DGAA) MOSFETs. iSES (2019)
Arun Kumar, Shiv Bhushan, Pramod Kumar Tiwari
Drain current modelling of double gate-all-around (DGAA) MOSFETs. IET Circuits Devices Syst. 13 (4) (2019)
Sandeep Moparthi, Pramod Kumar Tiwari, Visweswara Rao Samoju, Gopi Krishna Saramekala
Temperature Dependence of Subthreshold Characteristics of Negative Capacitance Recessed-Source/Drain (NC R-S/D) SOI MOSFET. iSES (2019)
Harshit Agnihotri, Abhishek Ranjan, Pramod Kumar Tiwari, Satyabrata Jit
An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs. ISVLSI (2011)
Pramod Kumar Tiwari, Chinmay R. Panda, Anupam Agarwal, Pratik Sharma, Satyabrata Jit
Modelling of doping-dependent subthreshold swing of symmetric double-gate MOSFETs. IET Circuits Devices Syst. 4 (4) (2010)