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Analytical modelling of the current (I)-voltage (V) characteristics of sub-micron gate-length ion-implanted GaAs MESFETs under dark and illuminated conditions.
Shweta Tripathi
Satyabrata Jit
Published in:
IET Circuits Devices Syst. (2013)
Keyphrases
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field effect transistors
short circuit
room temperature
sufficient conditions
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high speed
light source
power consumption
low voltage
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high density
maximum number
operating conditions
fixed length
cmos technology
gallium arsenide