Katsuji Satomi

Publication Activity (10 Years)

Years Active: 2007-2008
Publications (10 Years): 0

Publications

Satoshi Ishikura, Marefusa Kurumada, Toshio Terano, Yoshinobu Yamagami, Naoki Kotani, Katsuji Satomi, Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Toshiyuki Oashi, Hiroshi Makino, Hirofumi Shinohara, Hironori Akamatsu
A 45 nm 2-port 8T-SRAM Using Hierarchical Replica Bitline Technique With Immunity From Simultaneous R/W Access Issues. IEEE J. Solid State Circuits 43 (4) (2008)
Toshikazu Suzuki, Hiroyuki Yamauchi, Yoshinobu Yamagami, Katsuji Satomi, Hironori Akamatsu
A Stable 2-Port SRAM Cell Design Against Simultaneously Read/Write-Disturbed Accesses. IEEE J. Solid State Circuits 43 (9) (2008)
Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Susumu Imaoka, Hiroshi Makino, Yoshinobu Yamagami, Satoshi Ishikura, Toshio Terano, Toshiyuki Oashi, Keiji Hashimoto, Akio Sebe, Gen Okazaki, Katsuji Satomi, Hironori Akamatsu, Hirofumi Shinohara
A 45-nm Bulk CMOS Embedded SRAM With Improved Immunity Against Process and Temperature Variations. IEEE J. Solid State Circuits 43 (1) (2008)
Toshikazu Suzuki, Hiroyuki Yamauchi, Katsuji Satomi, Hironori Akamatsu
A Stable SRAM Mitigating Cell-Margin Asymmetricity with A Disturb-Free Biasing Scheme. CICC (2007)
Makoto Yabuuchi, Koji Nii, Yasumasa Tsukamoto, Shigeki Ohbayashi, Susumu Imaoka, Hiroshi Makino, Yoshinobu Yamagami, Satoshi Ishikura, Toshio Terano, Toshiyuki Oashi, Keiji Hashimoto, Akio Sebe, Gen Okazaki, Katsuji Satomi, Hironori Akamatsu, Hirofumi Shinohara
A 45nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations. ISSCC (2007)