Jie-Jie Zhu

Publication Activity (10 Years)

Years Active: 2014-2023
Publications (10 Years): 5

Top Topics

Restoration Method

Top Venues

Sci. China Inf. Sci.

Microelectron. Reliab.

Publications

Yilin Chen, Qing Zhu, Jie-Jie Zhu, Minhan Mi, Meng Zhang, Yuwei Zhou, Ziyue Zhao, Xiaohua Ma, Yue Hao
Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light. Sci. China Inf. Sci. 66 (2) (2023)
Ran Ye, Xiaolong Cai, Chenglin Du, Haijun Liu, Yu Zhang, Xiangyang Duan, Jie-Jie Zhu
An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs. IEEE Access 10 (2022)
Siyu Liu, Xiaohua Ma, Jie-Jie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Yilin Chen, Qing Zhu, Ling Yang, Yue Hao
Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. Sci. China Inf. Sci. 65 (10) (2022)
Qing Zhu, Xiaohua Ma, Bin Hou, Mei Wu, Jie-Jie Zhu, Ling Yang, Meng Zhang, Yue Hao
Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature. IEEE Access 8 (2020)
Jie-Jie Zhu, Bin Hou, Lixiang Chen, Qing Zhu, Ling Yang, Xiaowei Zhou, Peng Zhang, Xiaohua Ma, Yue Hao
Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs. IRPS (2018)
Wei-Wei Chen, Xiaohua Ma, Bin Hou, Sheng-Lei Zhao, Jie-Jie Zhu, Jincheng Zhang, Yue Hao
Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress. Microelectron. Reliab. 54 (6-7) (2014)