Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method.
Siyu LiuXiaohua MaJie-Jie ZhuMinhan MiJingshu GuoJielong LiuYilin ChenQing ZhuLing YangYue HaoPublished in: Sci. China Inf. Sci. (2022)