Sign in
Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress.
Wei-Wei Chen
Xiaohua Ma
Bin Hou
Sheng-Lei Zhao
Jie-Jie Zhu
Jincheng Zhang
Yue Hao
Published in:
Microelectron. Reliab. (2014)
Keyphrases
</>
high reliability
data sets
wide range
genetic algorithm
high precision
power consumption
real time
neural network
multiscale
mobile agents
structuring elements
integrated circuit
high density
failure rate
low variance