Jeong-Don Ihm

Publication Activity (10 Years)

Years Active: 2007-2023
Publications (10 Years): 12

Top Topics

Garbage Collection

Buffer Management

Top Venues

IEEE J. Solid State Circuits

Publications

Jinook Jung, Jun-Han Choi, Kyoung-Jun Roh, Jaewoo Park, Won-Mook Lim, Tae-Sung Kim, Han-Ki Jeong, Myoungbo Kwak, Jaeyoun Youn, Jeong-Don Ihm, Changsik Yoo, Youngdon Choi, Jung-Hwan Choi, Hyungjong Ko
A 4ns Settling Time FVF-Based Fast LDO Using Bandwidth Extension Techniques for HBM3. A-SSCC (2023)
Yong-Hun Kim, Hyung-Jin Kim, Jaemin Choi, Min-Su Ahn, Dongkeon Lee, Seung-Hyun Cho, Dong-Yeon Park, Young-Jae Park, Min-Soo Jang, Yong-Jun Kim, Jinyong Choi, Sung-Woo Yoon, Jae-Woo Jung, Jae-Koo Park, Jae-Woo Lee, Dae-Hyun Kwon, Hyung-Seok Cha, Si-Hyeong Cho, Seong-Hoon Kim, Jihwa You, Kyoung-Ho Kim, Dae-Hyun Kim, Byung-Cheol Kim, Young-Kwan Kim, Jun-Ho Kim, Seouk-Kyu Choi, Chan-Young Kim, Byongwook Na, Hye-In Choi, Reum Oh, Jeong-Don Ihm, Seung-Jun Bae, Nam Sung Kim, Jung-Bae Lee
-Generation 10nm DRAM. ISSCC (2021)
Seunghwan Hong, Chang-Hyun Bae, Yoo-Chang Sung, Jaewoong Kim, Junsub Yoon, Sangwoo Kim, Jin-Hyeok Baek, Cheongryong Cho, Useung Shin, Sang-Kyeom Kim, Hwan-Chul Jung, Ho-Jun Chang, Jang-Hoo Kim, Jeongsik Hwang, Hyunki Kim, Ki-Won Lee, Dongmin Kim, Han-Ki Jeong, Myung-O. Kim, Kyomin Sohn, Jeong-Don Ihm, Changsik Yoo, Sang Joon Hwang
A Reflection and Crosstalk Canceling Continuous-Time Linear Equalizer for High-Speed DDR SDRAM. VLSI Circuits (2021)
Chang-Kyo Lee, Hyung-Joon Chi, Jin-Seok Heo, Junghwan Park, Jin-Hun Jang, Dongkeon Lee, Jaehoon Jung, Dong-Hun Lee, Dae-Hyun Kim, Kihan Kim, Sang-Yun Kim, Dukha Park, Youngil Lim, Geuntae Park, Seungjun Lee, Seungki Hong, Dae-Hyun Kwon, Isak Hwang, Byongwook Na, Kyungryun Kim, Seouk-Kyu Choi, Hye-In Choi, Hangi-Jung, Wonil Bae, Jeong-Don Ihm, Seung-Jun Bae, Nam Sung Kim, Jung-Bae Lee
An 8.5-Gb/s/Pin 12-Gb LPDDR5 SDRAM With a Hybrid-Bank Architecture, Low Power, and Speed-Boosting Techniques. IEEE J. Solid State Circuits 56 (1) (2021)
Dongku Kang, Minsu Kim, Suchang Jeon, Wontaeck Jung, Jooyong Park, Gyo Soo Choo, Dong-Kyo Shim, Anil Kavala, Seungbum Kim, Kyung-Min Kang, Jiyoung Lee, Kuihan Ko, Hyun Wook Park, ByungJun Min, Changyeon Yu, Sewon Yun, Nahyun Kim, Yeonwook Jung, Sungwhan Seo, Sunghoon Kim, Moo Kyung Lee, Joo-Yong Park, James C. Kim, Young San Cha, Kwangwon Kim, Youngmin Jo, Hyun-Jin Kim, Youngdon Choi, Jindo Byun, Ji-hyun Park, Kiwon Kim, Tae-Hong Kwon, Young-Sun Min, Chiweon Yoon, Youngcho Kim, Dong-Hun Kwak, Eungsuk Lee, Wook-Ghee Hahn, Ki-Sung Kim, Kyungmin Kim, Euisang Yoon, Wontae Kim, Inryul Lee, Seunghyun Moon, Jeong-Don Ihm, Dae-Seok Byeon, Ki-Whan Song, Sangjoon Hwang, Kyehyun Kyung
-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface. ISSCC (2019)
Chulbum Kim, Doo-Hyun Kim, Woopyo Jeong, Hyun-Jin Kim, Il-Han Park, Hyun Wook Park, Jong-Hoon Lee, Jiyoon Park, Yang-Lo Ahn, Ji Young Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sanggi Hong, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yub Lee, Ki-Tae Park, Kyehyun Kyung
A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory. IEEE J. Solid State Circuits 53 (1) (2018)
Chulbum Kim, Ji-Ho Cho, Woopyo Jeong, Il-Han Park, Hyun Wook Park, Doo-Hyun Kim, Daewoon Kang, Sunghoon Lee, Ji-Sang Lee, Wontae Kim, Jiyoon Park, Yang-Lo Ahn, Jiyoung Lee, Jong-Hoon Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Yelim Kwon, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sangki Hong, Byunghoon Jeong, Hyun-Jin Kim, Chunan Lee, Young-Sun Min, Inryul Lee, In-Mo Kim, Sung-Hoon Kim, Dongkyu Yoon, Ki-Sung Kim, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yub Lee, Ki-Tae Park, Kyehyun Kyung
11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory. ISSCC (2017)
Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong-Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Cheon An Lee, Young-Sun Min, Moosung Kim, Ansoo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doosub Lee, Hyunggon Kim, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yup Lee, Ki-Tae Park, Kyehyun Kyung
256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers. IEEE J. Solid State Circuits 52 (1) (2017)
Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong-Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Jeong-Don Ihm, Doo-Gon Kim, Young-Sun Min, Moosung Kim, Ansoo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doosub Lee, Hyunggon Kim, Hyang-Ja Yang, Dae-Seok Byeon, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi
7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers. ISSCC (2016)
Seungjae Lee, Jin-Yub Lee, Il-Han Park, Jong-Yeol Park, Sung-Won Yun, Minsu Kim, Jong-Hoon Lee, Min-Seok Kim, Kangbin Lee, Taeeun Kim, Byungkyu Cho, Dooho Cho, Sangbum Yun, Jung-No Im, Hyejin Yim, Kyung-Hwa Kang, Suchang Jeon, Sungkyu Jo, Yang-Lo Ahn, Sung-Min Joe, Suyong Kim, Deok-kyun Woo, Jiyoon Park, Hyun Wook Park, Youngmin Kim, Jonghoon Park, Yongsu Choi, Makoto Hirano, Jeong-Don Ihm, Byunghoon Jeong, Seon-Kyoo Lee, Moosung Kim, Hokil Lee, Sungwhan Seo, Hongsoo Jeon, Chan-ho Kim, Hyunggon Kim, Jintae Kim, Yongsik Yim, Hoosung Kim, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi
7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate. ISSCC (2016)
Woopyo Jeong, Jae-Woo Im, Doo-Hyun Kim, Sangwan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, Youse Kim, Hyun Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok-Min Yoon, Wook-Ghee Hahn, Jinho Ryu, Sang-Won Shim, Kyung-Tae Kang, Jeong-Don Ihm, In-Mo Kim, Doosub Lee, Ji-Ho Cho, Moosung Kim, Jae-hoon Jang, Sang-Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi
A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate. IEEE J. Solid State Circuits 51 (1) (2016)
Jae-Woo Im, Woopyo Jeong, Doo-Hyun Kim, Sangwan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, Youse Kim, Hyun Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok-Min Yoon, Wook-Ghee Hahn, Jinho Ryu, Sang-Won Shim, Kyung-Tae Kang, Sung-Ho Choi, Jeong-Don Ihm, Young-Sun Min, In-Mo Kim, Doosub Lee, Ji-Ho Cho, Ohsuk Kwon, Ji-Sang Lee, Moosung Kim, Sang-Hyun Joo, Jae-hoon Jang, Sang-Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi
7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate. ISSCC (2015)
Youn-Sik Park, Sung-Wook Lee, Bai-Sun Kong, Kwang-Il Park, Jeong-Don Ihm, Joo-Sun Choi, Young-Hyun Jun
PVT-invariant single-to-differential data converter with minimum skew and duty-ratio distortion. ISCAS (2008)
Seung-Jun Bae, Kwang-Il Park, Jeong-Don Ihm, Ho-Young Song, Woo-Jin Lee, Hyun-Jin Kim, Kyoung-Ho Kim, Yoon-Sik Park, Min-Sang Park, Hong-Kyong Lee, Sam-Young Bang, Gil-Shin Moon, Seokwon Hwang, Young-Chul Cho, Sang-Jun Hwang, Dae-Hyun Kim, Ji-Hoon Lim, Jae-Sung Kim, Sunghoon Kim, Seong-Jin Jang, Joo-Sun Choi, Young-Hyun Jun, Kinam Kim, Soo-In Cho
An 80 nm 4 Gb/s/pin 32 bit 512 Mb GDDR4 Graphics DRAM With Low Power and Low Noise Data Bus Inversion. IEEE J. Solid State Circuits 43 (1) (2008)
Jeong-Don Ihm, Seung-Jun Bae, Kwang-Il Park, Ho-Young Song, Woo-Jin Lee, Hyun-Jin Kim, Kyoung-Ho Kim, Ho-Kyung Lee, Min-Sang Park, Sam-Young Bang, Mi-Jin Lee, Gil-Shin Moon, Young-Wook Jang, Suk-Won Hwang, Young-Chul Cho, Sang-Jun Hwang, Dae-Hyun Kim, Ji-Hoon Lim, Jae-Sung Kim, Su-Jin Park, Ok-Joo Park, Se-Mi Yang, Jin-Yong Choi, Young-Wook Kim, Hyun-Kyu Lee, Sunghoon Kim, Seong-Jin Jang, Young-Hyun Jun, Soo-In Cho
An 80nm 4Gb/s/pin 32b 512Mb GDDR4 Graphics DRAM with Low-Power and Low-Noise Data-Bus Inversion. ISSCC (2007)