256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers.
Dongku KangWoopyo JeongChulbum KimDoo-Hyun KimYong-Sung ChoKyung-Tae KangJinho RyuKyung-Min KangSungyeon LeeWandong KimHanjun LeeJaedoeg YuNayoung ChoiDong-Su JangCheon An LeeYoung-Sun MinMoosung KimAnsoo ParkJae-Ick SonIn-Mo KimPansuk KwakBong-Kil JungDoosub LeeHyunggon KimJeong-Don IhmDae-Seok ByeonJin-Yup LeeKi-Tae ParkKyehyun KyungPublished in: IEEE J. Solid State Circuits (2017)
Keyphrases
- flash memory
- garbage collection
- buffer management
- main memory
- solid state
- file system
- embedded systems
- random access
- disk drives
- b tree
- secondary storage
- data storage
- hand held devices
- database systems
- storage systems
- high speed
- small size
- index structure
- memory management
- storage management
- data structure
- storage devices
- low cost
- case study