Byunghoon Jeong

Publication Activity (10 Years)

Years Active: 2016-2022
Publications (10 Years): 7

Top Topics

Storage Systems

Garbage Collection

Top Venues

IEEE J. Solid State Circuits

Publications

Moosung Kim, Sung-Won Yun, Jungjune Park, Hyun Kook Park, Jungyu Lee, Yeong Seon Kim, Dae-Hoon Na, Sara Choi, Youngsun Song, Jonghoon Lee, Hyun-Jun Yoon, Kangbin Lee, Byunghoon Jeong, Sanglok Kim, Junhong Park, Cheon An Lee, Jaeyun Lee, Ji-Sang Lee, Jin Young Chun, Joonsuc Jang, Younghwi Yang, Seung Hyun Moon, Myung-Hoon Choi, Wontae Kim, Jungsoo Kim, Seok-Min Yoon, Pansuk Kwak, Myunghun Lee, Raehyun Song, Sunghoon Kim, Chiweon Yoon, Dongku Kang, Jin-Yub Lee, Jai Hyuk Song
A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface. ISSCC (2022)
Dae-Hoon Na, Jang-Woo Lee, Seon-Kyoo Lee, Hwasuk Cho, Junha Lee, Manjae Yang, Eunjin Song, Anil Kavala, Tongsung Kim, Dong-Su Jang, Youngmin Jo, Ji-Yeon Shin, Byung-Kwan Chun, Tae-Sung Lee, Byunghoon Jeong, Chiweon Yoon, Dongku Kang, Seungjae Lee, Jungdon Ihm, Dae-Seok Byeon, Jinyub Lee, Jai Hyuk Song
A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage. IEEE J. Solid State Circuits 56 (4) (2021)
Tongsung Kim, Anil Kavala, Hyunsuk Kang, Youngmin Jo, Jungjune Park, Kyoungtae Kang, Byung-Kwan Chun, Dong-Ho Shin, Dong-Su Jang, Byunghoon Jeong, Chiweon Yoon, Jinyub Lee, Jai Hyuk Song
A Hybrid ZQ Calibration Design for High-Density Flash Memory Toggle 5.0 High-speed Interface. A-SSCC (2021)
Jiho Cho, D. Chris Kang, Jongyeol Park, Sangwan Nam, Jung-Ho Song, Bong-Kil Jung, Jaedoeg Lyu, Hogil Lee, Won-Tae Kim, Hongsoo Jeon, Sunghoon Kim, In-Mo Kim, Jae-Ick Son, Kyoungtae Kang, Sang-Won Shim, JongChul Park, Eungsuk Lee, Kyung-Min Kang, Sang-Won Park, Jaeyun Lee, Seung Hyun Moon, Pansuk Kwak, Byunghoon Jeong, Cheon An Lee, Kisung Kim, Junyoung Ko, Tae-Hong Kwon, Junha Lee, Yohan Lee, Chaehoon Kim, Myeong-Woo Lee, Jeong-Yun Yun, HoJun Lee, Yonghyuk Choi, Sanggi Hong, Jonghoon Park, Yoonsung Shin, Hojoon Kim, Hansol Kim, Chiweon Yoon, Dae-Seok Byeon, Seungjae Lee, Jin-Yub Lee, Jai Hyuk Song
-Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface. ISSCC (2021)
Jang-Woo Lee, Dae-Hoon Na, Anil Kavala, Hwasuk Cho, Junha Lee, Manjae Yang, Eunjin Song, Tongsung Kim, Seon-Kyoo Lee, Dong-Su Jang, Byung-Kwan Chun, Youngmin Jo, Sunwon Jung, Doo-Il Jung, Chan-ho Kim, Daewoon Kang, Tae-Sung Lee, Byunghoon Jeong, Chiweon Yoon, Dongku Kang, Seungjae Lee, Jungdon Ihm, Dae-Seok Byeon, Jin-Yup Lee, Sangjoon Hwang, Jai Hyuk Song
A 1.8 Gb/s/pin 16Tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems. VLSI Circuits (2020)
Chulbum Kim, Ji-Ho Cho, Woopyo Jeong, Il-Han Park, Hyun Wook Park, Doo-Hyun Kim, Daewoon Kang, Sunghoon Lee, Ji-Sang Lee, Wontae Kim, Jiyoon Park, Yang-Lo Ahn, Jiyoung Lee, Jong-Hoon Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Yelim Kwon, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sangki Hong, Byunghoon Jeong, Hyun-Jin Kim, Chunan Lee, Young-Sun Min, Inryul Lee, In-Mo Kim, Sung-Hoon Kim, Dongkyu Yoon, Ki-Sung Kim, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yub Lee, Ki-Tae Park, Kyehyun Kyung
11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory. ISSCC (2017)
Seungjae Lee, Jin-Yub Lee, Il-Han Park, Jong-Yeol Park, Sung-Won Yun, Minsu Kim, Jong-Hoon Lee, Min-Seok Kim, Kangbin Lee, Taeeun Kim, Byungkyu Cho, Dooho Cho, Sangbum Yun, Jung-No Im, Hyejin Yim, Kyung-Hwa Kang, Suchang Jeon, Sungkyu Jo, Yang-Lo Ahn, Sung-Min Joe, Suyong Kim, Deok-kyun Woo, Jiyoon Park, Hyun Wook Park, Youngmin Kim, Jonghoon Park, Yongsu Choi, Makoto Hirano, Jeong-Don Ihm, Byunghoon Jeong, Seon-Kyoo Lee, Moosung Kim, Hokil Lee, Sungwhan Seo, Hongsoo Jeon, Chan-ho Kim, Hyunggon Kim, Jintae Kim, Yongsik Yim, Hoosung Kim, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi
7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate. ISSCC (2016)