Jin-Yub Lee

Publication Activity (10 Years)

Years Active: 2008-2024
Publications (10 Years): 7

Top Topics

Storage Management

Garbage Collection

Top Venues

VLSI Technology and Circuits

IEEE J. Solid State Circuits

Publications

Wontaeck Jung, Hyunggon Kim, Do-Bin Kim, Tae-Hyun Kim, Nam-Hee Lee, Dongjin Shin, Minyoung Kim, Youngsik Rho, Hun-Jong Lee, Yujin Hyun, Jaeyoung Park, Taekyung Kim, Hwiwon Kim, Gyeongwon Lee, Jisang Lee, Joonsuc Jang, Jungmin Park, Sion Kim, Su Chang Jeon, Suyong Kim, Jung-Ho Song, Min-Seok Kim, Taesung Lee, Byung-Kwan Chun, Tongsung Kim, Young Gyu Lee, Hokil Lee, Soowoong Lee, Hwaseok Lee, Dooho Cho, Sangwan Nam, Yeomyung Kim, Kunyong Yoon, Yoonjae Lee, Sunghoon Kim, Jungseok Hwang, Raehyun Song, Hyunsik Jang, Jae-Ick Son, Hongsoo Jeon, Myunghun Lee, Mookyung Lee, Kisung Kim, Eungsuk Lee, Myeong-Woo Lee, Sungkyu Jo, Chan Ho Kim, Jong Chul Park, Kyunghwa Yun, Soonock Seol, Ji-Ho Cho, Seungjae Lee, Jin-Yub Lee, Sunghoi Hur
13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate. ISSCC (2024)
Youngmin Jo, Anil Kavala, Tongsung Kim, Byung-Kwan Chun, Jungjune Park, Taesung Lee, Jungmin Seo, Manjae Yang, Taehyeon Park, Hyunjin Kwon, Cheolhui Lee, Younghoon Son, Junghwan Kwak, Younggyu Lee, Hwan-Seok Ku, Dae-Hoon Na, Changyeon Yu, Jonghoon Park, Jae-Hwan Kim, Hyojin Kwon, Chan-ho Kim, Moon-Ki Jung, Chanjin Park, Donghyun Seo, Moosung Kim, Seungjae Lee, Jin-Yub Lee, Dongku Kang, Chiweon Yoon, SungHoi Hur
generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package. VLSI Technology and Circuits (2023)
Moosung Kim, Sung-Won Yun, Jungjune Park, Hyun Kook Park, Jungyu Lee, Yeong Seon Kim, Dae-Hoon Na, Sara Choi, Youngsun Song, Jonghoon Lee, Hyun-Jun Yoon, Kangbin Lee, Byunghoon Jeong, Sanglok Kim, Junhong Park, Cheon An Lee, Jaeyun Lee, Ji-Sang Lee, Jin Young Chun, Joonsuc Jang, Younghwi Yang, Seung Hyun Moon, Myung-Hoon Choi, Wontae Kim, Jungsoo Kim, Seok-Min Yoon, Pansuk Kwak, Myunghun Lee, Raehyun Song, Sunghoon Kim, Chiweon Yoon, Dongku Kang, Jin-Yub Lee, Jai Hyuk Song
A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface. ISSCC (2022)
Jiho Cho, D. Chris Kang, Jongyeol Park, Sangwan Nam, Jung-Ho Song, Bong-Kil Jung, Jaedoeg Lyu, Hogil Lee, Won-Tae Kim, Hongsoo Jeon, Sunghoon Kim, In-Mo Kim, Jae-Ick Son, Kyoungtae Kang, Sang-Won Shim, JongChul Park, Eungsuk Lee, Kyung-Min Kang, Sang-Won Park, Jaeyun Lee, Seung Hyun Moon, Pansuk Kwak, Byunghoon Jeong, Cheon An Lee, Kisung Kim, Junyoung Ko, Tae-Hong Kwon, Junha Lee, Yohan Lee, Chaehoon Kim, Myeong-Woo Lee, Jeong-Yun Yun, HoJun Lee, Yonghyuk Choi, Sanggi Hong, Jonghoon Park, Yoonsung Shin, Hojoon Kim, Hansol Kim, Chiweon Yoon, Dae-Seok Byeon, Seungjae Lee, Jin-Yub Lee, Jai Hyuk Song
-Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface. ISSCC (2021)
Chulbum Kim, Doo-Hyun Kim, Woopyo Jeong, Hyun-Jin Kim, Il-Han Park, Hyun Wook Park, Jong-Hoon Lee, Jiyoon Park, Yang-Lo Ahn, Ji Young Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sanggi Hong, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yub Lee, Ki-Tae Park, Kyehyun Kyung
A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory. IEEE J. Solid State Circuits 53 (1) (2018)
Chulbum Kim, Ji-Ho Cho, Woopyo Jeong, Il-Han Park, Hyun Wook Park, Doo-Hyun Kim, Daewoon Kang, Sunghoon Lee, Ji-Sang Lee, Wontae Kim, Jiyoon Park, Yang-Lo Ahn, Jiyoung Lee, Jong-Hoon Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Yelim Kwon, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sangki Hong, Byunghoon Jeong, Hyun-Jin Kim, Chunan Lee, Young-Sun Min, Inryul Lee, In-Mo Kim, Sung-Hoon Kim, Dongkyu Yoon, Ki-Sung Kim, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yub Lee, Ki-Tae Park, Kyehyun Kyung
11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory. ISSCC (2017)
Seungjae Lee, Jin-Yub Lee, Il-Han Park, Jong-Yeol Park, Sung-Won Yun, Minsu Kim, Jong-Hoon Lee, Min-Seok Kim, Kangbin Lee, Taeeun Kim, Byungkyu Cho, Dooho Cho, Sangbum Yun, Jung-No Im, Hyejin Yim, Kyung-Hwa Kang, Suchang Jeon, Sungkyu Jo, Yang-Lo Ahn, Sung-Min Joe, Suyong Kim, Deok-kyun Woo, Jiyoon Park, Hyun Wook Park, Youngmin Kim, Jonghoon Park, Yongsu Choi, Makoto Hirano, Jeong-Don Ihm, Byunghoon Jeong, Seon-Kyoo Lee, Moosung Kim, Hokil Lee, Sungwhan Seo, Hongsoo Jeon, Chan-ho Kim, Hyunggon Kim, Jintae Kim, Yongsik Yim, Hoosung Kim, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi
7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate. ISSCC (2016)
Yong Hoon Kang, Jin-Kook Kim, Sang Won Hwang, Joon Young Kwak, Jun-Yong Park, Daeyong Kim, Chan Ho Kim, Jong-Yeol Park, Yong-Taek Jeong, Jong Nam Baek, Su Chang Jeon, Pyungmoon Jang, Sang Hoon Lee, You-Sang Lee, Min-Seok Kim, Jin-Yub Lee, Yun Ho Choi
High-Voltage Analog System for a Mobile NAND Flash. IEEE J. Solid State Circuits 43 (2) (2008)