-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface.
Dongku KangMinsu KimSuchang JeonWontaeck JungJooyong ParkGyo Soo ChooDong-Kyo ShimAnil KavalaSeungbum KimKyung-Min KangJiyoung LeeKuihan KoHyun Wook ParkByungJun MinChangyeon YuSewon YunNahyun KimYeonwook JungSungwhan SeoSunghoon KimMoo Kyung LeeJoo-Yong ParkJames C. KimYoung San ChaKwangwon KimYoungmin JoHyun-Jin KimYoungdon ChoiJindo ByunJi-hyun ParkKiwon KimTae-Hong KwonYoung-Sun MinChiweon YoonYoungcho KimDong-Hun KwakEungsuk LeeWook-Ghee HahnKi-Sung KimKyungmin KimEuisang YoonWontae KimInryul LeeSeunghyun MoonJeong-Don IhmDae-Seok ByeonKi-Whan SongSangjoon HwangKyehyun KyungPublished in: ISSCC (2019)
Keyphrases
- flash memory
- hard disk
- disk drives
- read write
- solid state
- garbage collection
- main memory
- random access
- buffer management
- file system
- embedded systems
- b tree
- data storage
- database systems
- response time
- storage medium
- storage management
- storage systems
- buffer pool
- small size
- storage devices
- memory management
- database management systems
- multi dimensional
- hand held devices
- tree structure
- high speed
- general purpose
- software engineering
- data analysis