Dong Myong Kim

Publication Activity (10 Years)

Years Active: 2005-2024
Publications (10 Years): 9

Top Topics

Quantum Mechanics

Silicon Dioxide

Top Venues

Microelectron. Reliab.

Publications

Tae Jun Yang, Jung Rae Cho, Hyunkyu Lee, Hee Jun Lee, Seung Joo Myoung, Da Yeon Lee, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Changwook Kim, Jiyong Woo, Dae Hwan Kim
Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor. IEEE Access 12 (2024)
Dongyeon Kang, Wonjung Kim, Jun Tae Jang, Changwook Kim, Jung Nam Kim, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Yoon Kim, Dae Hwan Kim
Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor. IEEE Access 11 (2023)
Yongwoo Lee, Jinsu Yoon, Kwangmin Lim, Bongsik Choi, Geon-Hwi Park, Ju Won Jeon, Jong-Ho Bae, Dong Myong Kim, Dae Hwan Kim, Eunmee Kwon, Sung-Jin Choi
Vertical and lateral charge losses during short time retention in 3-D NAND flash memory. ESSDERC (2021)
Yongwoo Lee, Jinsu Yoon, Yeamin Kim, Dong Myong Kim, Dae Hwan Kim, Sung-Jin Choi
Humidity Effects According to the Type of Carbon Nanotubes. IEEE Access 9 (2021)
Dongyeon Kang, Jun Tae Jang, Shinyoung Park, Md. Hasan Raza Ansari, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Changwook Kim, Seongjae Cho, Dae Hwan Kim
Threshold-Variation-Tolerant Coupling-Gate α-IGZO Synaptic Transistor for More Reliably Controllable Hardware Neuromorphic System. IEEE Access 9 (2021)
Jun Tae Jang, Jungi Min, Yeongjin Hwang, Sung-Jin Choi, Dong Myong Kim, Hyungjin Kim, Dae Hwan Kim
Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System. IEEE Access 8 (2020)
Mihee Uhm, Jin-Moo Lee, Jieun Lee, Jung Han Lee, Sungju Choi, Byung-Gook Park, Dong Myong Kim, Sung-Jin Choi, Hyun-Sun Mo, Yong-Joo Jeong, Dae Hwan Kim
Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors. Sensors 19 (20) (2019)
Sungju Choi, Jungmok Kim, Jinsu Yoon, Inseok Chae, Sung-Jin Choi, Dong Myong Kim, Hyun-Sun Mo, Dae Hwan Kim
The Module of Gain-controllable Amplifier Readout Circuits based on Si Nanowire ISFET for Biochips for Optimization of Dynamic Range, Linearity, and Resolution. ESSDERC (2019)
Junyeap Kim, Hanbin Yoo, Heesung Lee, Seong Kwang Kim, Sungju Choi, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim
Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length. Microelectron. Reliab. 85 (2018)
Se Woon Kim, Kang Seob Roh, Seung Hwan Seo, Kwan Young Kim, Gu Cheol Kang, Sunyeong Lee, Chang Min Choi, So Ra Park, Jun Hyun Park, Ki Chan Chun, Kwan Jae Song, Dae Hwan Kim, Dong Myong Kim
Extraction of interface states at emitter-base heterojunctions in AlGaAs/GaAs heterostructure bipolar transistors using sub-bandgap photonic excitation. Microelectron. Reliab. 48 (3) (2008)
Jin-Gu Lee, Dae Hwan Kim, Jae Gab Lee, Dong Myong Kim, Kyeong-Sik Min
A compact HSPICE macromodel of resistive RAM. IEICE Electron. Express 4 (19) (2007)
Kyeong-Sik Min, Kouichi Kanda, Hiroshi Kawaguchi, Kenichi Inagaki, Fayez Robert Saliba, Hoon-Dae Choi, Hyun-Young Choi, Daejeong Kim, Dong Myong Kim, Takayasu Sakurai
SRAM's. IEICE Trans. Electron. (4) (2005)