Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length.
Junyeap KimHanbin YooHeesung LeeSeong Kwang KimSungju ChoiSung-Jin ChoiDae Hwan KimDong Myong KimPublished in: Microelectron. Reliab. (2018)