Estimation of gate-to-channel tunneling current in ultra-thin oxide sub-50nm double gate devices.
Saibal MukhopadhyayKeunwoo KimJae-Joon KimShih-Hsien LoRajiv V. JoshiChing-Te ChuangKaushik RoyPublished in: Microelectron. J. (2007)
Keyphrases
- leakage current
- field effect transistors
- low voltage
- steady state
- multiple input
- silicon dioxide
- high density
- cmos technology
- mathematical analysis
- design considerations
- power line
- nano scale
- real time
- liquid crystal displays
- maximum likelihood
- high speed
- accurate estimation
- energy consumption
- video coding
- electrical properties
- short circuit