Low-Temperature Polycrystalline-Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization and Metal/Hafnium Oxide Gate Stack on Nonalkaline Glass Substrate.
Tatsuya MeguroAkito HaraPublished in: IEICE Trans. Electron. (2017)
Keyphrases
- thin film
- field effect transistors
- high density
- film thickness
- semiconductor devices
- silicon dioxide
- space charge
- silicon nitride
- grain size
- low density
- high speed
- cmos technology
- room temperature
- solar cell
- electron microscopy
- data center
- short circuit
- steady state
- mathematical analysis
- chemical vapor deposition
- plasma etching
- multi layer
- low cost
- white light interferometry
- decision support system