A 90-nm low-power 32-kB embedded SRAM with gate leakage suppression circuit for mobile applications.
Koji NiiYasumasa TsukamotoTomoaki YoshizawaSusumu ImaokaYoshinobu YamagamiToshikazu SuzukiAkinori ShibayamaHiroshi MakinoShuhei IwadePublished in: IEEE J. Solid State Circuits (2004)
Keyphrases
- mobile applications
- low power
- cmos technology
- low voltage
- leakage current
- power consumption
- nm technology
- high speed
- low cost
- mobile devices
- silicon on insulator
- embedded systems
- logic circuits
- mobile users
- single chip
- power dissipation
- mixed signal
- mobile phone
- dynamic random access memory
- knowledge base
- user experience
- context aware
- vlsi circuits
- image sensor
- digital signal processing
- smart phones
- real time
- energy efficiency
- random access memory
- low power consumption
- end users
- mobile apps
- end to end