Effects of Far-BEOL anneal on the WLR and product reliability characterization of FinFET process technology.
Hyun-Chul SagongHyunjin KimSeungjin ChooSungyoung YoonHyewon ShimSangsu HaTae-Young JeongMinhyeok ChoeJunekyun ParkSangchul ShinSangwoo PaePublished in: IRPS (2018)