Implications of Halo Implant Shadowing and Backscattering from Mask Layer Edges on Device Leakage Current in 65nm SRAM.

H. C. Srinivasaiah

Published in: VLSI Design (2012)

Keyphrases

leakage current
silicon dioxide
low voltage
electrical properties
gate insulator
high temperature
power line
spatially varying
edge preserving
power management
space charge