Login / Signup

SRAM design on 65-nm CMOS technology with dynamic sleep transistor for leakage reduction.

Kevin ZhangUddalak BhattacharyaZhanping ChenFatih HamzaogluDaniel MurrayNarendra VallepalliYih WangBo ZhengMark Bohr
Published in: IEEE J. Solid State Circuits (2005)
Keyphrases