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SRAM design on 65-nm CMOS technology with dynamic sleep transistor for leakage reduction.

Kevin ZhangUddalak BhattacharyaZhanping ChenFatih HamzaogluDaniel MurrayNarendra VallepalliYih WangBo ZhengMark Bohr
Published in: IEEE J. Solid State Circuits (2005)
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