Gate-Oxide Trapping Enabled Synaptic Logic Transistor.
Xin JuDiing Shenp AngPublished in: IRPS (2020)
Keyphrases
- silicon dioxide
- leakage current
- field effect transistors
- low voltage
- electrical properties
- high density
- steady state
- space charge
- classical logic
- high temperature
- multi valued
- learning rules
- modal logic
- logic programming
- automated reasoning
- high speed
- electron microscopy
- asynchronous circuits
- design considerations
- logic programs