Threshold-voltage shift model based on electron tunneling under positive gate bias stress for amorphous InGaZnO thin-film transistors.
Piao-Rong XuRuo-He YaoPublished in: Displays (2018)
Keyphrases
- thin film
- high density
- field effect transistors
- short circuit
- electron microscopy
- electric field
- space charge
- average reward reinforcement learning
- low density
- silicon dioxide
- room temperature
- data center
- grain size
- solar cell
- white light interferometry
- steady state
- metal oxide
- plasma etching
- back propagation
- query processing
- database systems