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Delay Testing Viability of Gate Oxide Short Defects.

Jean Marc GallièreMichel RenovellFlorence AzaïsYves Bertrand
Published in: J. Comput. Sci. Technol. (2005)
Keyphrases
  • silicon dioxide
  • test cases
  • leakage current
  • fuel cell
  • real time
  • data sets
  • field effect transistors
  • information systems
  • critical path
  • room temperature