A Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch with Temperature-compensated Fast Turn-on Technique for Improving Reliability.
Hsuan-Yu ChenYu-Yung KaoZhi-Qiang ZhangCheng-Hsiang LiaoHong-Yuan YangMing-Sheng HsuKe-Horng ChenYing-Hsi LinShian-Ru LinTsung-Yen TsaiPublished in: ISSCC (2021)
Keyphrases
- fully integrated
- structuring elements
- high speed
- silicon dioxide
- gate dielectrics
- high temperature
- cmos technology
- field effect transistors
- workflow management
- high density
- query language
- mathematical morphology
- binary images
- business processes
- electrical properties
- chemical vapor deposition
- e government
- software engineering