-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors.
Shuhei MaedaSatoru OhshitaKazuma FurutaniYuto YakuboTakahiko IshizuTomoaki AtsumiYoshinori AndoDaisuke MatsubayashiKiyoshi KatoTakashi OkudaMasahiro FujitaShunpei YamazakiPublished in: ISSCC (2018)
Keyphrases
- transmission electron microscopy
- x ray
- field effect transistors
- room temperature
- high resolution
- high density
- electron microscopy
- metal oxide
- memory requirements
- cmos technology
- mathematical analysis
- power consumption
- integrated circuit
- memory space
- memory size
- semiconductor manufacturing
- low power
- memory management
- main memory
- steady state
- silicon dioxide
- three dimensional
- memory usage
- feedback loop
- associative memory
- data structure