Characterization of a low leakage current and high-speed 7T SRAM circuit with wide voltage margins.

Khawar Sarfraz Volkan Kursun

Published in: ISVLSI (2013)

Keyphrases

leakage current
low voltage
high speed
low power
cmos technology
electrical properties
design considerations
silicon dioxide
power line
metal oxide
random access memory
power management
real time
frame rate
low cost
power consumption
parallel processing