A 800MHz, O.21pJ, 1.2V to 6V Level Shifter Using Thin Gate Oxide Devices in 65nm LSTP.
Prakhar ShuklaPrabhat SinghTushar MaheshwariAnuj GroverVikas RanaPublished in: ICECS (2020)
Keyphrases
- cmos technology
- leakage current
- nm technology
- low voltage
- high speed
- higher level
- low power
- metal oxide
- information systems
- levels of abstraction
- electrical properties
- image sensor
- transmission electron microscopy
- room temperature
- electron microscopy
- database
- design considerations
- high frequency
- wireless sensor networks
- search engine