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Flexible metal-insulator-metal capacitor using plasma enhanced binary hafnium-zirconium-oxide as gate dielectric layer.

Jagan Singh MeenaMin-Ching ChuJitendra N. TiwariHsin-Chiang YouChung-Hsin WuFu-Hsiang Ko
Published in: Microelectron. Reliab. (2010)
Keyphrases
  • silicon dioxide
  • high temperature
  • space charge
  • silicon nitride
  • field effect transistors
  • electric field
  • high density
  • metal oxide
  • chemical vapor deposition
  • leakage current
  • three dimensional