Top-gated atomic precision phosphorous doped silicon single electron transistor with low thermal budget gate dielectric.
Evan M. AndersonLeon MaurerLisa A. TracyS. W. SmithPing LuAaron M. KatzenmeyerAndrew D. BaczewskiDeAnna M. CampbellMichael T. MarshallDan R. WardTzu-Ming LuShashank MisraPublished in: DRC (2019)