Voltage acceleration and t63.2 of 1.6-10 nm gate oxides.

Rolf-Peter Vollertsen E. Y. Wu

Published in: Microelectron. Reliab. (2004)

Keyphrases

field effect transistors
leakage current
low voltage
steady state
high density
mathematical analysis
electrical properties
cmos technology
silicon dioxide
markov chain
power line
metal oxide
database
three dimensional
nm technology