Plasma-Enhanced Combustion-Processed Al2O3 Gate Oxide for In2O3 Thin Film Transistors.
Q. H. LiuC. ZhaoC. Z. ZhaoIvona Z. MitrovicS. HallW. Y. XuL. YangEng Gee LimQ. N. WangY. L. WeiY. X. CaoPublished in: ICICDT (2019)
Keyphrases
- thin film
- high density
- field effect transistors
- electron microscopy
- silicon nitride
- room temperature
- short circuit
- low density
- plasma etching
- chemical vapor deposition
- cmos technology
- grain size
- data center
- steady state
- solar cell
- mathematical analysis
- leakage current
- databases
- white light interferometry
- power plant
- learning tasks