Assessing alpha-particle-induced SEU sensitivity of flip-chip bonded SRAM using high energy irradiation.
Saqib A. KhanShi-Jie WenSanghyeon BaegPublished in: IEICE Electron. Express (2016)
Keyphrases
- high energy
- random access memory
- high speed
- power consumption
- low power
- cmos technology
- low cost
- single chip
- high sensitivity
- design considerations
- embedded dram
- data transmission
- analog vlsi
- sensitivity analysis
- low voltage
- dynamic random access memory
- high density
- host computer
- power reduction
- programmable logic
- vlsi design
- vlsi implementation
- data sets
- nm technology
- multithreading
- electron beam