$f_{MAX}$ Exceeding 3 GHz in Self-Aligned Zinc-Oxide Thin-Film Transistors with Micron-Scale Gate Length.
Yue MaSigurd WagnerNaveen VermaJames C. SturmPublished in: DRC (2023)
Keyphrases
- thin film
- high density
- field effect transistors
- cmos technology
- electron microscopy
- room temperature
- silicon nitride
- short circuit
- low power
- power consumption
- low density
- high speed
- grain size
- low voltage
- solar cell
- chemical vapor deposition
- leakage current
- white light interferometry
- integrated circuit
- data center
- steady state
- multi layer
- parallel processing
- plasma etching
- power dissipation
- film thickness
- data analysis