Fault-tolerant designs for 256 Mb DRAM.
Toshiaki KirihataYohji WatanabeHing WongJohn K. DeBrosseMunehiro YoshidaDaisuke KatoShuso FujiiMatthew R. WordemanPeter PoechmuellerStephen A. ParkeYoshiaki AsaoPublished in: IEEE J. Solid State Circuits (1996)