A Wide-Voltage-Range Half-Path Timing Error-Detection System With a 9-Transistor Transition-Detector in 40-nm CMOS.
Weiwei ShanXinchao ShangXing WanHao CaiChuan ZhangJun YangPublished in: IEEE Trans. Circuits Syst. I Regul. Pap. (2019)
Keyphrases
- error detection
- low voltage
- metal oxide semiconductor
- leakage current
- high speed
- error correction
- low power
- cmos technology
- wide range
- error recovery
- power supply
- fault tolerance
- metal oxide
- data cleansing
- low cost
- error resilient
- integrated circuit
- charge coupled device
- error correcting
- circuit design
- power dissipation
- design considerations
- nm technology
- fault isolation
- power consumption
- silicon dioxide
- silicon on insulator
- image sensor
- power system
- error control
- random access memory
- asynchronous circuits
- sensor networks
- multi agent systems