1/f Noise in 3D vertical gate-all-around junction-less silicon nanowire transistors.
Chhandak MukherjeeCristell ManeuxJulien PezardGuilhem LarrieuPublished in: ESSDERC (2017)
Keyphrases
- space charge
- cmos technology
- silicon dioxide
- field effect transistors
- high density
- low power
- electric field
- metal oxide semiconductor
- low cost
- noise level
- power consumption
- gallium arsenide
- parallel processing
- steady state
- noise model
- additive noise
- image noise
- low voltage
- power dissipation
- random noise
- mathematical analysis
- noise removal
- noisy data
- median filter
- noise reduction
- real time
- multiscale
- high speed
- markov chain
- frequency domain
- missing data
- noise free
- integrated circuit